| 摘要 |
<p>A chromeless phase shift mask and an exposure method using the same are provided to form a fine space pattern by reducing optical sensitivity of a line pattern. A chromeless phase shift mask includes a substrate, a line pattern(315), and a space pattern. The line pattern includes a first pattern(305) and a second pattern(310). The first pattern is arranged in a predetermined interval within the substrate. The first pattern has a phase difference of 180 degrees with respect to a surface of the substrate. The second pattern is arranged between the first pattern and the first pattern. The second pattern has the same phase as the phase of the substrate. The space pattern is arranged between the line patterns which is adjacent to the line pattern.</p> |
