MEMORY CELL AND METHOD OF FORMING A MAGNETIC TUNNEL JUNCTION (MTJ) OF A MEMORY CELL
摘要
<p>A memory including a memory cell and method for producing the memory cell are disclosed. The memory includes a substrate in a first plane. A first metal connection extending in a second plane is provided. The second plane is substantially perpendicular to the first plane. A magnetic tunnel junction (MTJ) is provided having a first layer coupled to the metal connection such that the first layer of the MTJ is oriented along the second plane.</p>
申请公布号
WO2009089360(A1)
申请公布日期
2009.07.16
申请号
WO2009US30451
申请日期
2009.01.08
申请人
QUALCOMM INCORPORATED;GU, SHIQUN;KANG, SEUNG, H.;NORWAK, MATTHEW, M.