| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element and a manufacturing method thereof, for preventing stress migration caused by thermal stress. SOLUTION: An impure reflection preventing film 230 formed on a metal layer 220 includes a laminate structure comprising a Ti film of a first reflection preventing film and a TiN film of a second reflection preventing film. The first reflection preventing film and the second reflection preventing film are formed at the temperature 50°C or lower in situ. COPYRIGHT: (C)2009,JPO&INPIT |
