| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a fine pattern forming method of a semiconductor element having a pattern which is free of misalignment and finer than the resolution of exposure equipment. <P>SOLUTION: A first etching mask pattern 113a is formed to have a pitch twice as large as the pitch of a contact hole pattern. An auxiliary film is formed on a side wall of the pattern and etched to form a second etching mask pattern 121a between first etching mask patterns in an automatic alignment manner. A lower hard mask 109 is etched using the first and second etching mask patterns to form a hard mask pattern. This is used as a mask to etch an interlayer insulating film 107 as a film to be etched, thereby forming a contact hole. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
