| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device with high reliability, and to provide a method of manufacturing the same. SOLUTION: On a silicon substrate 2, pluralities of insulating films 3 and electrode films 4 are laminated alternately to form a laminate 5. Then, a through-hole 7 is formed in the laminate 5 in the lamination direction. Selective nitrification processing is carried out to selectively form a charge layer 12 of silicon nitride in a region, corresponding to the electrode film 4, on an inner surface of the through-hole 7. High-pressure oxidation processing is carried out to form a block layer 13 of silicon oxide between the charge layer 12 and electrode film 4. Then, a tunnel layer 11 is formed of silicon oxide on the inner surface of the through-hole 7. Consequently, a flash memory 1 is manufactured which has the charge layer 12 parted by electrode films 4. COPYRIGHT: (C)2009,JPO&INPIT
|
