| 摘要 |
A red laser portion and an infrared laser portion are integrated on an n-type GaAs substrate. A p-type cladding layer made of p-type AlGaInP in the red laser portion and a p-type cladding layer made of p-type AlGaInP in the infrared laser portion have a ridge stripe portion having a light emitting point. A current block layer made of SiNx is formed on both sides of each ridge stripe portion, and a strain relaxing layer made of ZrO2 is selectively formed on an outer side of each ridge stripe region on the current block layer. Provided that Tc is a thermal expansion coefficient of the p-type cladding layers, Tb is a thermal expansion coefficient of the current block layer, and Ts is a thermal expansion coefficient of the strain relaxing layer, the relation of Tb<Tc<Ts is satisfied.
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