| 摘要 |
<p>In a production method for a semiconductor device relating to the present invention, first, a pattern of a resist film made of organic polymers is formed on a semiconductor substrate. Next, impurity ions with 1 x 1014 cm-2 or greater of dose amount are implanted into the semiconductor substrate using the resist film pattern as a mask. The resist film pattern mask is removed sequentially through an oxidation treatment, swelling treatment and removal treatment. In the oxidation treatment, a treatment to oxidize a hardened layer formed in a surface portion of the resist film pattern by the ion implantation is implemented. In the swelling treatment, a treatment to swell the organic polymers composing the resist film pattern where the hardened layer has been oxidized using a chemical solution is implemented. In the removal treatment, the swollen resist film pattern is removed using the chemical solution used for the swelling treatment.</p> |
