| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing solution using solid abrasive grains used for chemical-mechanical polishing in a process of flattening a semiconductor integrated circuit, in which polishing solution suppresses the occurrence of dishing and scratching caused by the agglomeration of solid abrasive grains, etc. SOLUTION: The polishing solution is used for chemical-mechanical polishing in a process of flattening a semiconductor integrated circuit. The polishing solution includes (a) a classfourth ammonium cation, (b) an organic acid, (c) a nonorganic particle, and (d) a compound represented by the general formula (I) (where R denotes a hydrogen atom or a displaced or undisplaced alkyl group). The polishing solution shows pH ranging from 1 to 7. COPYRIGHT: (C)2009,JPO&INPIT |
