| 摘要 |
<P>PROBLEM TO BE SOLVED: To calculate polishing time for obtaining an aimed thickness of an interlayer insulating film without making conditions of polishing time by using a preceding wafer in a chemical mechanical polishing method for planarizing the interlayer insulating film which is formed by covering protruded patterns on a substrate. <P>SOLUTION: The interlayer insulating film for covering the protruded patterns is formed and is previously subjected to planarization with respect to several substrates which have the protruded patterns whose area ratio R with respect to the substrate is different from one another. The area ratios R of the protruded patterns with respect to the substrates are R1, R2, R3, ..., and Rx. The polishing times T for achieving the objective film thickness in polishing the interlayer insulating film so formed that it covers the protruded patterns are T1, T2, T3, ..., and Tx. On that condition, a linear approximate equation R=aT+b relating the area ratio R to the time T is calculated. The polishing time T of the interlayer insulating film which is so formed that it covers the protruded pattern exhibiting the area ratio R is calculated by using a calculating formula expressed by T=(R-b)/a. <P>COPYRIGHT: (C)2009,JPO&INPIT |
