JUNCTION OF SEMICONDUCTOR MEMORY DEVICE AND FORMING METHOD THEREOF

摘要

A junction area of a semiconductor memory device and a forming method thereof are provided to reduce program disturbance property by forming double junction areas between select lines and word lines in a cell region on a semiconductor substrate. A junction area in a semiconductor memory device includes a semiconductor substrate(200) and junction regions(JC). Gate lines are formed in the semiconductor substrate. The junction regions are formed by implanting impurities having different masses into the semiconductor substrate region which is located between the gate lines.