| 摘要 |
<p>Disclosed is an organic thin film transistor wherein at least three terminals, namely a gate electrode, a source electrode and a drain electrode, an insulating layer and an organic semiconductor layer are formed on a substrate, and the source-drain current is controlled by applying a voltage to the gate electrode. In this organic thin film transistor, the organic semiconductor layer contains a compound having a specific structure. Also disclosed is an organic thin film light-emitting transistor wherein light emission is obtained by utilizing the current between the source and the drain of an organic thin film transistor, while controlling the light emission by applying a voltage to the gate electrode. The organic thin film transistor has a high response speed (driving speed) and a high on/off ratio. The organic thin film light-emitting transistor utilizes such an organic thin film transistor.</p> |
