| 摘要 |
A photo mask blank and a photo mask manufacturing method are provided, which enable to manufacture photomask at the high accuracy by reducing the pattern size variation. The light-shielding layer(2), the reflection barrier layer(3), and etching mask film(4) are layered in order on the transparent substrate(1). The light-shielding layer contains silicide and transition metal silicide. Silicide contains one kind or more selected from the silicon group including silicon, oxygen, nitrogen, and carbon. The transition metal silicide contains alloy of the transition metal and silicon and one kind or more selected from transition metal, silicon, oxygen, nitrogen, and carbon. The reflection barrier layer comprises silicide or the transition metal silicide. The etching mask film contains the chromic compound, chrome substance, tantalum compound, and tantalum substance. |
