| 摘要 |
An electronic device can have an insulating layer lying between a first semiconductor layer and a base layer. A second semiconductor layer, having a different composition and stress as compared to the first semiconductor layer, can overlie at least a portion of the first semiconductor layer. In one embodiment, a first electronic component can include a first active region that includes a first portion of the first and the second semiconductor layers. A second electronic component can include a second active region that can include a second portion of the first semiconductor layer. Different processes can be used to form the electronic device. In another embodiment, annealing a workpiece can be performed and the stress of at least one of the semiconductor layers can be changed. In a different embodiment, annealing the workpiece can be performed either before or after the formation of the second semiconductor layer.
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