发明名称 Mask pattern data producing method, patterning method, reticle correcting method, reticle manufacturing method, and semiconductor apparatus manufacturing method
摘要 A mask pattern data producing method is disclosed, which comprises preparing design pattern data in which contact holes are arranged on part of the grid points in matrix, preparing first mask pattern data in which first opening patterns are arranged on all of the grid points, and designing second mask pattern data in which second opening patterns and third opening patterns are arranged, the second opening patterns being arranged on the grid points at which the contact holes are arranged in the design pattern data to include the first opening patterns, the third opening patterns being arranged on a pair of grid points, which is a pair of diagonal grid points only on which the contact holes are arranged in a unit grid formed by four grid points, to include the first opening patterns arranged on the pair of grid points, in place of the second opening patterns.
申请公布号 US7560197(B2) 申请公布日期 2009.07.14
申请号 US20050061599 申请日期 2005.02.22
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NAKAMURA HIROKO;KOTANI TOSHIYA;TANAKA SATOSHI;MIMOTOGI SHOJI
分类号 G03F1/92;G03C5/00;G03F9/00;G06F17/50 主分类号 G03F1/92
代理机构 代理人
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