Insulated gate planar integrated power device with co-integrated Schottky diode and process

摘要

A process for integrating a Schottky contact inside the apertures of the elementary cells that constitute the integrated structure of the insulated gate power device in a totally self-alignment manner does not requires a dedicated masking step. This overcomes the limits to the possibility of increasing the packing density of the cellular structure of the integrated power device, while permitting improved performances of the co-integrated Schottky diode under inverse polarization of the device and producing other advantages. A planar integrated insulated gate power device with high packing density of the elementary cells that compose it, having a Schottky diode electrically in parallel to the co-integrated device, is also disclosed.