| 摘要 |
A method for forming capacitor of the semiconductor device is provided, which improves the device character by improving the thin film of the conductive film for the storage node. A method for forming the conductive film for the storage node is as follows. The process of TiCl4 flow, fuzzy, NH3 flow, and fuzzy is repeatedly performed and the TiN seed layer(108) is layered. The process of TiCl4 and NH3 flow, fuzzy, NH3 flow, and fuzzy on the TiN seed layer is repeatedly performed and the addition TiN film(110) is evaporated. The TiN seed layer is layered in the thickness of 1~10Å. The process of the TiCl4 flow, fuzzy, NH3 flow and fuzzy is performed in one cycle and the TiN seed layer of 0.3~0.4Å is layered.
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