| 摘要 |
<p>The invention relates to a field effect transistor comprising at least one source electrode layer, at least one drain electrode layer that is arranged on the same plane, a semiconductor layer, an insulator layer, and a gate electrode layer. The gate electrode layer only partially covers a channel located between the at least one source electrode layer and the at least one drain electrode layer from a vertical perspective relative to the at least one source electrode layer and the at least one drain electrode layer.</p> |
