SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device and a manufacturing method thereof are provided, which can implement a transistor in which the on-current is big. The first source(S1) and the first drain(D1) include the Ge silicide. The primary channel layer(C1) comprises siGe between the first source and the first drain. The first transistor comprises the first gate equipped on the primary channel layer. The Si layer is formed under the primary channel layer. The silicide layer(25) is formed under the first source and the first drain. The insulating layer(10) is equipped under the Si layer and silicide layer. The Si layer is expanded between the silicide layer and insulating layer.