PHASE CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要
<p>A phase change memory device and a method of manufacturing the same are provided, which can prevent misalignment problem of the bottom electrode and diffusion stopper. The phase change memory device comprises the storage node and the switching element connected to the storage node. The storage node comprises electrode and phase-change layer(30). The diffusion stopper(20) includes the silicide compound between the electrode and phase-change layer. The silicide compound includes at least one among silicide, silicide oxide, and silicide nitride. The electrode is the bottom electrode(10).</p>
申请公布号
KR20090076597(A)
申请公布日期
2009.07.13
申请号
KR20080002636
申请日期
2008.01.09
申请人
SAMSUNG ELECTRONICS CO., LTD.;SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION
发明人
KIM, CHEOL KYU;KWON, MIN HO;KHANG, YOON HO;KANG, YOUN SEON;LEE, TAE YON;HEO, SUNG;KIM, KI BUM;NAM, SUNG WOOK;LEE, DONG BOK