| 摘要 |
A manufacturing method of the semiconductor device is provided, which increases the charge mobility by making the gate spacer out of the material fitting for the performance characteristic of each transistor. The gate(106) is formed at the upper part of the semiconductor substrate(100) classified into the cell area(A), the NMOS area(B), and the PMOS area(C). The first spacer stuff film is formed at the upper part of the whole surface. The first spacer stuff film of the NMOS area is removed. The second spacer stuff film is formed at the upper part of the whole surface. The second spacer stuff film is front-etched and the first gate spacer(114) is formed in the gate sidewall of the NMOS area. The first spacer stuff film of the PMOS area is front-etched and the second gate spacer(118) is formed in the gate sidewall of the PMOS area.
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