| 摘要 |
<p>A formation method of the semiconductor device is provided, which improves the productivity and yield by removing the capacitor lifting generation. The first insulating layer(310) and the second insulating layer(320) are formed on semiconductor substrate(300) comprised of the net-die domain and the edge die domain. The first photoresist pattern exposing the edge die domain is formed on the second insulating layer. The second insulating layer is etched by making the first photoresist pattern as a mask. The etch barrier layer(340) is formed on the whole surface including the second insulating layer. The second insulating layer of the net die range is exposed by planarization-etching the etch barrier layer. The hard mask layer is formed on the whole surface including the second insulating layer. The second photosensitive pattern is formed on the hard mask layer.</p> |
