发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 In a semiconductor device circuit formation surfaces of each of a plurality of semiconductor chips can be easily located at even level when the semiconductor chips are arranged side by side so that a process of forming rearrangement wiring is simplified. The semiconductor chips are mounted on a substrate via an adhesive layer in a two-dimensional arrangement. A resin layer is formed on the substrate and located around the semiconductor elements. The resin layer has the same thickness as a thickness of the semiconductor elements. An organic insulating layer is formed over a surface of the resin layer and circuit formation surfaces of the semiconductor elements. A rearrangement wiring layer is formed on the organic insulating layer and electrodes of the semiconductor chips. External connection terminals are electrically connected to the circuit formation surfaces of the semiconductor elements through wiring in the rearrangement wiring layer.
申请公布号 KR100907232(B1) 申请公布日期 2009.07.10
申请号 KR20030034580 申请日期 2003.05.30
申请人 发明人
分类号 H01L23/12;H01L21/58;H01L21/60;H01L21/98;H01L23/31;H01L23/538;H01L25/065 主分类号 H01L23/12
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