| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a defect or fault is not generated even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode, and also to provide a method of manufacturing the same. SOLUTION: In the method of manufacturing the semiconductor device, an insulating film 5 is formed. In a source electrode 10 and a drain electrode 11, first conductive films 10a and 11a, respectively, are formed on the insulating film. On the first conductive films, second conductive film 10b and 11b containing ZnO to which n-type or p-type impurities are doped, are formed, respectively. The second conductive films are made in an island shape by a first etching; and the first conductive films are also made in an island shape by a second etching. A semiconductor film containing the ZnO is formed on the insulating film and the island-shaped second conductive film. COPYRIGHT: (C)2009,JPO&INPIT
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