发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME |
摘要 |
The semiconductor device includes the concentration of the impurity of the first conductivity type in a doped channel layer of a first conductivity type in the pass transistor is set at a relatively low value, and pocket regions of the first conductivity type in a pass transistor are formed so as to be relatively shallow with a relatively high impurity concentration.
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申请公布号 |
US2009174009(A1) |
申请公布日期 |
2009.07.09 |
申请号 |
US20090350227 |
申请日期 |
2009.01.08 |
申请人 |
FUJITSU MICROELECTRONICS LIMITED |
发明人 |
USUJIMA AKIHIRO;KOJIMA HIDEYUKI |
分类号 |
H01L27/088;H01L21/8232 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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