| 摘要 |
<p>An image sensor according to an embodiment includes a semiconductor substrate including a photodiode; a protective layer pattern having a lower trench that is disposed on the semiconductor substrate to expose the photodiode; an insulating layer pattern having the upper trench that is disposed on the lower trench of the protective layer pattern to expose the photodiode; and a wave guide that is disposed in the lower trench and the upper trench.</p> |
