| 摘要 |
PROBLEM TO BE SOLVED: To provide a device for producing a metallic film, the film deposition speed of which is high, and in which an inexpensive raw material can be used and no impurities remain in the film, and to provide a method for producing a metallic film. SOLUTION: In one embodiment, the device comprises: a chamber in which a metallic plate and a substrate are arranged; a gaseous starting material feeding means introducing a gaseous starting material into the chamber; a first plasma generating means which turns the gaseous starting material to plasma and generates raw material gas plasma, and in which the gaseous starting material plasma is arranged so as to be reacted with the metal plate in the chamber; a reduction gas feeding means feeding a reduction gas comprising hydrogen into the chamber; a second plasma generating means turning the reduction gas to plasma and generating reduction gas plasma; and a chamber heating means heating the chamber to a prescribed temperature. COPYRIGHT: (C)2009,JPO&INPIT
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