| 摘要 |
PROBLEM TO BE SOLVED: To provide a composite silicon ring for a plasma etching device for supporting a wafer, which makes the etching rate of the wafer uniform. SOLUTION: Disclosed is the composite silicon ring for supporting the wafer in the plasma etching device which comprises an outermost peripheral silicon ring 18 and an innermost peripheral silicon ring 17 fitted concentrically to an inner periphery of the outermost peripheral silicon ring 18 and having a smaller specific resistance value than the outermost peripheral silicon ring 18, wherein Rc/Rs is 10-4 to 2-1 and the specific resistance value Rs of the outermost peripheral silicon ring is 50 to 1,000Ωcm, where Rs is the specific resistance value of the outermost peripheral silicon ring of the composite silicon ring and Rc is the specific resistance value of the innermost peripheral silicon ring of the composite silicon ring. COPYRIGHT: (C)2009,JPO&INPIT
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