TRENCH SEMICONDUCTOR DEVICE OF IMPROVED VOLTAGE STRENGTH, AND METHOD OF FABRICATION

摘要

A trench IGBT is disclosed which includes a semiconductor substrate having formed therein a set of cell trenches formed centrally and a set of annular guard trenches concentrically surrounding the cell trenches. The cell trenches receive cell trench conductors via cell trench insulators for providing IGBT cells. The guard trenches receive guard trench conductors via guard trench insulators for enabling the IGBT to withstand higher voltages through mitigation of field concentrations. Capacitive coupling conductors overlie the guard trench conductors via a dielectric layer, each for capacitively coupling together two neighboring ones of the guard trench conductors. The capacitive coupling conductors are easily adjustably variable in shape, size and placement relative to the guard trench conductors for causing the individual guard trench conductors to possess potentials for an optimal contour of the depletion layer.