MASK BLANK, PRODUCTION METHOD OF MASK BLANK AND PRODUCTION METHOD OF MASK

摘要

A blank mask which can form a transfer pattern having high resolution without causing a shape defect. A mask blank (10) comprises a transparent substrate (11), a layer to be etched (14) located above the transparent substrate (11), a suppression layer (20) located above the layer to be etched (14) and formed using a first chemically amplified resist, and a mask layer (15) located above the suppression layer (20) and formed using a second chemically amplified resist. The mask layer (15) functions to produce an acid by the second chemically amplified resist when the mask layer (15) receives exposure light and to change the dissolubility of themask layer (15) to the developer. The suppression layer (20) functions to produce an acid by the first chemically amplified resist when the suppression layer (20) receives exposure light through the mask layer (15) and to exhibit insolubility of the mask layer (15) to the developer.