| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a chemical amplification type positive-type resist composition suitable excimer laser lithography of ArF, KrF or the like, having various kinds of excellent resist performance such as sensitivity and resolution, in particular, having improved line edge roughness, and allowing a fine pattern without bringing falling-down, and a novel sulfonium salt used in the composition. <P>SOLUTION: A polymer compound has a structural unit expressed by Formula (Ib). This positive-type resist composition of the present invention contains the polymer compound and a specified resin. <P>COPYRIGHT: (C)2009,JPO&INPIT |
