RESIST FOR E-BEAM LITHOGRAPHY

摘要

A resist for E-beam lithography is provided. To be specific, provided is a negative resist in which two kinds of organic siloxane compounds are copolymerized. The resist for E-beam lithography makes it possible to manufacture a semiconductor device with further improved quality because the resist is highly sensitive to E-beam, easily prepared, and has uniform properties even though it is stored for a long time.