Field-effect transistor

摘要

Disclosed is a field-effect transistor characterized by using a compound represented by the formula (1) below as a semiconductor material.
(In the formula (1), X 1 and X 2 independently represent a sulfur atom, a selenium atom or a tellurium atom; and R 1 and R 2 independently represent an unsubstituted or halogeno-substituted C 1 -C 36 aliphatic hydrocarbon group.)