PHASE CHANGE RANDOM ACCESS MEMORY COMPOSED WITH SINGLE ELEMENT SEMIMETALLIC LAYER

摘要

A phase change random access memory composed with a single element semi-metal film is provided to realize a phase change memory having higher wiring speed than a conventional GST(Ge-Sb-Te) material by providing the semi-metal film between the bottom electrode and the top electrode. In a phase change random access memory, a storage node comprises a phase change material layer(12). In a storage node, a semi-metal film of a single group is formed between the top electrode and the bottom electrode. The semi-metal thin film is made of Sb or Bi, and the thickness of the semi-metal thin film is 0.1nm - 15nm. More than one of nitrogen, oxygen, carbon, boron, and mixture of them is doped to the semi-metal of a single group. The oxygen and nitrogen are doped in the semi-metal film of a single group.