METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to inject ions to a contact plug in order to weaken lattice bonds, thereby increasing the bottom CD(critical dimension) of a contact hole in an etching process. A method for manufacturing a semiconductor device comprises the following steps of: forming an insulating layer with a contact plug on a substrate(21); injecting ions to the contact plug; forming a sacrificing layer(29) and a supporting layer(30); etching the sacrificing layer and the supporting layer to form a contact hole(32A) for opening the contact plug; removing the ion-injected part of the contact plug; forming a storage node inside the contact hole along the surface thereof; and removing the sacrificing layer.