| 摘要 |
<p>A non-volatile memory device and a manufacturing method thereof are provided to form a tunneling insulation layer having wider width than that of a floating gate, thereby preventing the deterioration of E/W(Erase/Write) cycling. A tunneling insulation layer(201A) is formed on a substrate(200). A first conductive layer is formed on the tunneling insulation layer to form a floating gate(202A). A dielectric film(203A) is formed on the first conductive layer. A second conductive layer is formed on the dielectric film to form a control gate(204A). The second conductive layer, the dielectric film and the first conductive layer are etched to form a cell gate. A buffer layer(205A) is formed along the surface of the cell gate.</p> |
