| 摘要 |
Formation of an NMOS transistor is disclosed, where at least one of carbon, atomic fluorine and molecular fluorine (F2) are combined with implantations of at least one of arsenic, phosphorous and antimony. The dopant combinations can be used in LDD implantations to form source/drain extension regions, as well as in implantations to form halo regions and/or source/drain regions. The combinations of dopants help to reduce sheet resistance and increase carrier mobility, which in turn facilitates device scaling and desired device performance.
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