| 摘要 |
<p>A method for manufacturing a non-volatile memory device is provided to form a drain contact plug using a conductive material formed in a perpendicular direction to an active area in order to prevent the short circuit between neighboring drain contact plugs. A method for manufacturing a non-volatile memory device comprises the following steps. A first interlayer insulating layer is partially etched to form a contact hole. The contact hole meets at right angle to an active area(202) of a substrate. The contact hole is filled with a conductive material. The conductive material is etched to form a drain contact plug(205A). A space between the drain contact plug and a hard mask pattern is filled with a second interlayer conductive layer(207). A bit line(208) is formed on the top of the drain contact plug.</p> |
