METHOD FOR FORMING A METAL LINE OF SEMICONDUCTOR MEMORY DEVICE

摘要

A method for forming a metal line of a semiconductor memory device is provided to form a concave portion on a contact protruded from a metal line in order to decrease a separation distance between metal lines. A method for forming a metal line of a semiconductor memory device comprises the following steps of: forming a first metal line(100) with a contact region whose at least one side is protruded; and forming at least one second metal line(200) adjacent to a layer which includes the first metal line, wherein a concave portion(231) is formed on the second metal line at a position corresponding to the contact region. The separation distance between the contact region of the first metal line and the concave portion of the second metal line is the same as or smaller than the separation distance between the first metal line and the second metal line.