摘要 |
Double gate transistors having at least two polysilicon patterns on a thin body used as an active region and methods of forming the same are provided. Embodiments of the transistors and methods provided are capable of enhancing current drivability of a semiconductor memory device using polysilicon patterns having different impurity concentrations from each other. In some embodiments an active region is protruded from a semiconductor substrate, an impurity diffusion region is formed in the active region, and a gate insulating pattern and a gate pattern are sequentially stacked on the active region. In these embodiments, the gate pattern may include polysilicon patterns having different impurity concentrations from each other.
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