发明名称 Double gate transistors having at least two polysilicon patterns on a thin body used as active region and methods of forming the same
摘要 Double gate transistors having at least two polysilicon patterns on a thin body used as an active region and methods of forming the same are provided. Embodiments of the transistors and methods provided are capable of enhancing current drivability of a semiconductor memory device using polysilicon patterns having different impurity concentrations from each other. In some embodiments an active region is protruded from a semiconductor substrate, an impurity diffusion region is formed in the active region, and a gate insulating pattern and a gate pattern are sequentially stacked on the active region. In these embodiments, the gate pattern may include polysilicon patterns having different impurity concentrations from each other.
申请公布号 US7557403(B2) 申请公布日期 2009.07.07
申请号 US20060379432 申请日期 2006.04.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HA DAE-WON
分类号 H01L29/788 主分类号 H01L29/788
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