发明名称 |
Contact structure and method of forming the same |
摘要 |
In a method of forming a contact structure, first and second conductive structures may be formed on a lower structure to be spaced from each other. An insulating layer may be formed on the lower structure to cover the first and second conductive structures. A first hole exposing the first conductive structure may be formed through the insulating layer. A spacer may be formed on a sidewall of the first hole. A first contact electrically coupled to the first conductive structure may be formed in the first hole having the sidewall on which the spacer is formed. A portion of the insulating layer located between the spacers may be removed to form a second hole exposing the second conductive structure. A second contact electrically coupled to the second conductive structure may be formed in the second hole.
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申请公布号 |
US7557026(B2) |
申请公布日期 |
2009.07.07 |
申请号 |
US20070711118 |
申请日期 |
2007.02.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JONG-KYU;JEONG SANG-SUP;CHOI SUNG-GIL;YOON KUK-HAN;KIM BUM-SOO |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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