发明名称 |
DATA OUTPUT BUFFER CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THAT |
摘要 |
A data output buffer circuit and a semiconductor memory device for including the same are provided to secure the high signal qualification regardless of the change of the operating voltage by steadily controlling the slew rate of the output signal and the input signal. A data output buffer circuit comprises a pre-driver(520), a main driver(530) and a ZQ Calibration circuit. The pre-driver controls the slew rate of the input signal. The main driver operates the output terminal in response to the output signal of pre-driver. The ZQ Calibration circuit controls the pre-driver and the main driver. The pre-driver increases or decreased the slew rate according to the rise or drop of the operating voltage controlled by the ZQ Calibration circuit. The main driver regularly maintains the output impedance the ZQ Calibration circuit regardless of the change of the operating voltage.
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申请公布号 |
KR20090074427(A) |
申请公布日期 |
2009.07.07 |
申请号 |
KR20080000202 |
申请日期 |
2008.01.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEON, YOUNG JIN |
分类号 |
G11C7/10;G11C11/4093;G11C11/4096 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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