| 摘要 |
An exposing method using variable shaped beam capable of correcting CD linearity of the variable shaped beam and a pattern formation method using the same are provided to project exactly the electronic beam on the photosensitive film by correcting the shot size of the electronic beam. It determines whether the design size of the beam shot exposing the circuit pattern is greater than a predetermined size or smaller(S210-S220). In case the discernment result design size is greater than the predetermined size, the size of the beam shot is linearly corrected. In case the discernment result design size is smaller, the size of the beam shot is non-linearly corrected(S230-S240). The location of the beam shot in which the design size is corrected is revised(S250). |
