| 摘要 |
Disclosed is a semiconductor ceramic composition containing no Pb, wherein the Curie temperature is shifted to the positive direction and high jump characteristics are obtained while suppressing increase in room temperature resistivity to the minimum. Specifically disclosed is a semiconductor ceramic composition obtained by sintering a calcinated powder mixture of a BT calcinated powder composed of a (BaR)TiO3 calcinated powder or a Ba(TiM)O3 calcinated powder (wherein R and M are semiconductorizing elements) and a BNT calcinated powder composed of (BiNa)TiO3 calcinated powder, wherein a part of Ba in BaTiO3 is substituted by Bi-Na. The semiconductor ceramic composition is obtained by adding BaCO3 and/or TiO2 into the BT calcinated powder, the BNT calcinated powder or a mixture of them. |
