发明名称 SLURRY FOR CHEMICAL MECHANICAL POLISHING AND METHOD OF MANUFACTURING THE SAME
摘要 Chemical mechanical polishing slurry is provided to improve a polishing speed of an oxide film in chemical mechanical polishing and micro scratch by optimizing a mixing ratio of a plurality of slurries. A method for manufacturing chemical mechanical polishing slurry containing abrasive particles comprises the steps of: (S100,S200) preparing plural slurry with different particle sizes of abrasive particles; and (S300) mixing a plurality of slurries. The chemical and mechanical polishing slurry is prepared by mixing a first slurry including abrasive particles having average particle size of 250-350 nm and a second slurry including abrasive particles having average particle size of 80-200 nm.
申请公布号 KR20090073729(A) 申请公布日期 2009.07.03
申请号 KR20070141757 申请日期 2007.12.31
申请人 K.C.TECH CO., LTD. 发明人 KIM, YONG KUK;SUH, MYUNG WON;HONG, SUK MIN;HWANG, JOON HA;KWON, JANG KUK
分类号 C09K3/14 主分类号 C09K3/14
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