发明名称 |
SLURRY FOR CHEMICAL MECHANICAL POLISHING AND METHOD OF MANUFACTURING THE SAME |
摘要 |
Chemical mechanical polishing slurry is provided to improve a polishing speed of an oxide film in chemical mechanical polishing and micro scratch by optimizing a mixing ratio of a plurality of slurries. A method for manufacturing chemical mechanical polishing slurry containing abrasive particles comprises the steps of: (S100,S200) preparing plural slurry with different particle sizes of abrasive particles; and (S300) mixing a plurality of slurries. The chemical and mechanical polishing slurry is prepared by mixing a first slurry including abrasive particles having average particle size of 250-350 nm and a second slurry including abrasive particles having average particle size of 80-200 nm.
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申请公布号 |
KR20090073729(A) |
申请公布日期 |
2009.07.03 |
申请号 |
KR20070141757 |
申请日期 |
2007.12.31 |
申请人 |
K.C.TECH CO., LTD. |
发明人 |
KIM, YONG KUK;SUH, MYUNG WON;HONG, SUK MIN;HWANG, JOON HA;KWON, JANG KUK |
分类号 |
C09K3/14 |
主分类号 |
C09K3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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