发明名称 SLURRY FOR CHEMICAL MECHANICAL POLISHING AND METHOD OF MANUFACTURING THE SAME
摘要 Chemical mechanical polishing slurry is provided to minimize micro scratch in manufacturing an integrated semiconductor by removing macro particles from abrasive particles, and to improve polishing rate and polishing selectivity. A method for manufacturing chemical mechanical polishing slurry comprises the steps of: (S100) mixing abrasive particles, solvent and dispersing agent to prepare a mixture for producing slurry; (S110) milling a mixture for producing the slurry; (S120); filtering the mixture for producing the milled slurry; inputting the mixture for producing the filtered slurry in an aging vessel; (S130) aging the mixture for producing the slurry; and (S140) rotating the aged vessel.
申请公布号 KR20090073728(A) 申请公布日期 2009.07.03
申请号 KR20070141756 申请日期 2007.12.31
申请人 K.C.TECH CO., LTD. 发明人 HONG, SUK MIN;SUH, MYUNG WON;KIM, YONG KUK;HWANG, JOON HA;KIM, JEONG YUN
分类号 C09K3/14 主分类号 C09K3/14
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