| 摘要 |
PROBLEM TO BE SOLVED: To drive a solid-state image sensor at a high speed while reducing noise. SOLUTION: In this drive method of a solid-state image sensor 10 provided, in a semiconductor substrate 11, with: a photoelectric conversion element 12, a plurality of vertical charge transfer paths 13 configured to vertically transfer signal charge stored in the photoelectric conversion element 12; a line memory 18 arranged at ends of the respective vertical charge transfer paths 13; and a horizontal charge transfer path 15 transferring the signal charge transferred from the line memory 18 to an output end side, the drive method includes a drive step of vertically transferring the signal charge by the vertical charge transfer paths 13 in a horizontal transfer period of the signal charge by the horizontal charge transfer path 15. In the drive step, the vertical transfer is carried out so that a total application time of low-level pulses in the horizontal transfer period to the transfer electrode with a high-level pulse applied thereto at the completion of the vertical transfer is set smaller than the total application time of low-level pulses in the horizontal transfer period to the transfer electrode with the low-level pulse applied thereto at the completion of the vertical transfer. COPYRIGHT: (C)2009,JPO&INPIT
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