发明名称 CRYSTALLINE INORGANIC FILM AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a crystalline inorganic film that manufactures an inorganic film having good crystalline by using a liquid-phase method even in a comparatively low temperature process not higher than the heat-proof temperature of a plastic substrate and has a wide material selectivity too. SOLUTION: The crystalline inorganic film 1 includes inorganic substances containing metal elements/semiconductor elements. The method performs sequentially a step (A) for using the raw-material liquid containing an organic solvent and raw materials containing at least one of the constituent elements of the crystalline inorganic film 1 which are selected from the group comprising inorganic raw materials, organic-precursor raw materials, and organic-inorganic-compositive-precursor raw materials to form a non-monocrystal film 12 containing all the constituent elements of the crystalline inorganic film 1 by a liquid-phase method, a step (B) for decomposing all the organic components contained in the non-monocrystal film 12 under a temperature condition not higher than the decomposing temperatures of at least one organic components contained in the non-monocrystal film 12, and a step (C) for heating the non-monocrystal film 12 under a temperature condition not lower than the crystallization temperature of the non-monocrystal film 12 for film crystallization. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009147192(A) 申请公布日期 2009.07.02
申请号 JP20070324393 申请日期 2007.12.17
申请人 FUJIFILM CORP 发明人 UMEDA KENICHI
分类号 H01L21/20;H01L21/336;H01L29/786 主分类号 H01L21/20
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