| 摘要 |
A manufacturing method of a semiconductor device is provided to form a structure without an attack of a top metal in forming a thick metal structure by adding a hard mask process. A metal line layer(120) is formed on a predetermined substrate(100). A hard mask layer(110) is formed on the metal line layer. A photosensitive pattern for etching the metal line layer is formed on the hard mask layer. A metal line is formed by etching the metal line layer after using the photosensitive pattern for etching the metal line layer. The photosensitive pattern for etching the metal line layer is removed. The hard mask layer is made of an oxide film or a nitride film.
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