发明名称 OVERCURRENT PROTECTIVE DEVICE FOR SEMICONDUCTOR POWER CONVERTER
摘要 PROBLEM TO BE SOLVED: To provide an overcurrent protective device for semiconductor power converter which detects the current of an IGBT module accurately and surely prevents the breakage due to the overcurrent of an IGBT. SOLUTION: A semiconductor power converter, which synchronously switches on or switches off a plurality of power semiconductors 1 and 2 which have sense cells which are connected in parallel and in which sense currents geared to a main current flow, includes a voltage generating circuit 30, which generates a sense voltage geared to the sum of the sense currents of at least two pieces of the power semiconductor elements, an overcurrent protective circuit 40, which performs the overcurrent protective action of the individual power semiconductor elements, according to the sense voltage, and a gate driving circuit 50 for driving the individual power semiconductor elements. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009148031(A) 申请公布日期 2009.07.02
申请号 JP20070320902 申请日期 2007.12.12
申请人 MITSUBISHI ELECTRIC CORP 发明人 OKUDA TATSUYA;FUKU MASARU;IWAKIRI TAISUKE
分类号 H02M1/00;H02H3/08 主分类号 H02M1/00
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