METHOD OF FORMING POLYCRYSTALLINE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a polycrystalline semiconductor film by which a short circuit between two adjacent TFTs can surely be prevented and the latitude of circuit design can be increased. SOLUTION: In the method of forming the polycrystalline semiconductor film crystal-grown in a first direction on an insulating substrate according to the invention, crystal growth on the insulating substrate is so controlled that crystal grains (15a) crystal-grown toward a first side and crystal grains (15b) crystal-grown toward a second side opposite from the first side collide against each other in a saw-tooth or sine-wave shape in a second direction orthogonal to the first direction. COPYRIGHT: (C)2009,JPO&INPIT